TSM060N03PQ33 RGG Tech Spezifikatioune
Taiwan Semiconductor Corporation - TSM060N03PQ33 RGG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - TSM060N03PQ33 RGG
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Taiwan Semiconductor | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-PDFN (3.1x3.1) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V | |
Power Dissipation (Max) | 40W (Tc) | |
Package / Case | 8-PowerWDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1342 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 25.4 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 62A (Tc) | |
Basis Produktnummer | TSM060 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation TSM060N03PQ33 RGG.
Produktiounsattriff | ||||
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Part Number | TSM060N03PQ33 RGG | TSM055N03EPQ56 | TSM038N03PQ33 | TSM042N03CS RLG |
Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Basis Produktnummer | TSM060 | TSM055 | TSM038 | TSM042 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 25.4 nC @ 10 V | 11.1 nC @ 4.5 V | 48 nC @ 10 V | 24 nC @ 4.5 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1342 pF @ 15 V | 1210 pF @ 25 V | 2557 pF @ 15 V | 2200 pF @ 25 V |
Supplier Device Package | 8-PDFN (3.1x3.1) | 8-PDFN (5x5.8) | 8-PDFN (3.1x3.1) | 8-SOP |
Package / Case | 8-PowerWDFN | 8-PowerTDFN | 8-PowerWDFN | 8-SOIC (0.154", 3.90mm Width) |
Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V | 5.5mOhm @ 20A, 10V | 3.8mOhm @ 19A, 10V | 4.2mOhm @ 12A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 62A (Tc) | 80A (Tc) | 19A (Ta), 78A (Tc) | 30A (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 175°C (TJ) |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Power Dissipation (Max) | 40W (Tc) | 74W (Tc) | 2.4W (Ta), 39W (Tc) | 7W (Tc) |
FET Feature | - | - | - | - |
Eroflueden TSM060N03PQ33 RGG PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir TSM060N03PQ33 RGG - Taiwan Semiconductor Corporation.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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